Graphene film on Ni/SiO2/Si 100mm dia, High Purity Chemical A-Z Resistivity: N/A

Resistivity:            N/A

Part Number EQ-DW0125x65

Polish: both sides EPI polished

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Graphene film on Ni/SiO2/Si 100mm dia, High Purity Chemical A-Z Resistivity: N/AGraphene films are grown directly on a Ni SiO2 Si deposited on an oxidized silicon wafer usinga CVD process. Specifications: Research Grade , about 90 % useful area Wafer Size: 100 mm diameter Growth Method: Chemical Vapor Deposition (CVD) Technique Film thickness: 1 10 monolayer thick Graphene film is multilayer with thickness varying in the range 1 10 layers; Graphene layers are aligned relative to each (graphite like A B stacking ) other as